SiC based Miniaturized Devices
SiC based Miniaturized Devices
English[eng]
high-power impulse magnetron sputtering (HiPIMS)||silicon carbide||aluminum nitride||thin film||Rutherford backscattering spectrometry (RBS)||grazing incidence X-ray diffraction (GIXRD)||Raman spectroscopy||6H-SiC||indentation||deformation||material removal mechanisms||critical load||4H-SiC||critical depth of cut||Berkovich indenter||cleavage strength||nanoscratching||power electronics||high-temperature converters||MEMS devices||SiC power electronic devices||neural interface||neural probe||neural implant||microelectrode array||MEA||SiC||3C-SiC||doped SiC||n-type||p-type||amorphous SiC||epitaxial growth||electrochemical characterization||MESFET||simulation||PAE||bulk micromachining||electrochemical etching||circular membrane||bulge test||vibrometry||mechanical properties||Young’s modulus||residual stress||FEM||semiconductor radiation detector||microstrip detector||power module||negative gate-source voltage spike||4H-SiC, epitaxial layer||Schottky barrier||radiation detector||point defects||deep level transient spectroscopy (DLTS)||thermally stimulated current spectroscopy (TSC)||electron beam induced current spectroscopy (EBIC)||pulse height spectroscopy (PHS)||n/a
English[eng]
high-power impulse magnetron sputtering (HiPIMS)||silicon carbide||aluminum nitride||thin film||Rutherford backscattering spectrometry (RBS)||grazing incidence X-ray diffraction (GIXRD)||Raman spectroscopy||6H-SiC||indentation||deformation||material removal mechanisms||critical load||4H-SiC||critical depth of cut||Berkovich indenter||cleavage strength||nanoscratching||power electronics||high-temperature converters||MEMS devices||SiC power electronic devices||neural interface||neural probe||neural implant||microelectrode array||MEA||SiC||3C-SiC||doped SiC||n-type||p-type||amorphous SiC||epitaxial growth||electrochemical characterization||MESFET||simulation||PAE||bulk micromachining||electrochemical etching||circular membrane||bulge test||vibrometry||mechanical properties||Young’s modulus||residual stress||FEM||semiconductor radiation detector||microstrip detector||power module||negative gate-source voltage spike||4H-SiC, epitaxial layer||Schottky barrier||radiation detector||point defects||deep level transient spectroscopy (DLTS)||thermally stimulated current spectroscopy (TSC)||electron beam induced current spectroscopy (EBIC)||pulse height spectroscopy (PHS)||n/a