Preparation and Properties of 2D Materials (Record no. 28722)

MARC details
000 -LEADER
fixed length control field 01383nam a2200121Ia 4500
008 - FIXED-LENGTH DATA ELEMENTS--GENERAL INFORMATION
fixed length control field 220620s9999||||xx |||||||||||||| ||und||
245 #0 - TITLE STATEMENT
Title Preparation and Properties of 2D Materials
546 ## - LANGUAGE NOTE
Language note English[eng]
650 ## - SUBJECT ADDED ENTRY--TOPICAL TERM
Topical term or geographic name entry element α-MoO3||carbon nitride||g-C3N4||molybdenum trioxide||nanoplates||synthesis||few-layer MoS2||magnetron sputtering||magnetron sputtering power||raman spectroscopy||disorder||V2Se9||atomic crystal||mechanical exfoliation||scanning Kelvin probe microscopy||MoS2||black phosphorus||2D/2D heterojunction||junction FET||tunneling diode||tunneling FET||band-to-band tunneling (BTBT)||natural molybdenite||MoS2 nanosheet||SiO2||liquid exfoliation||photoelectric properties||uniaxial strain||flexible substrate||film–substrate interaction||photoluminescence||Raman spectroscopy||molybdenum disulfide||bilayer-stacked structure||WS2||lubricant additives||tribological properties||interfacial layer||contact resistance||bias stress stability||saturable absorbers||Langmuir–Blodgett technique||Q-switched laser||chemical vapor deposition||P2O5||p-type conduction||P-doped MoS2||transition metal dichalcogenides||two-dimensional materials||ferroelectrics||2D heterostructure||WSe2||NbSe2||Nb2O5 interlayer||synapse device||neuromorphic system||n/a
700 ## - ADDED ENTRY--PERSONAL NAME
Personal name Cho, Byungjin||Kim, Yonghun
856 ## - ELECTRONIC LOCATION AND ACCESS
Uniform Resource Identifier <a href="https://mdpi.com/books/pdfview/book/2587">https://mdpi.com/books/pdfview/book/2587</a>
942 ## - ADDED ENTRY ELEMENTS (KOHA)
Koha item type E-Books
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        Kerala University of Digital Sciences, Innovation and Technology Knowledge Centre Kerala University of Digital Sciences, Innovation and Technology Knowledge Centre 20/06/2022   20/06/2022 20/06/2022 E-Books