Nanowire Field-Effect Transistor (FET) 

<br/><br/><br/>English[eng] 
<br/><br/><label>Subjects--Topical Terms: </label><br/>random dopant||drift-diffusion||variability||device simulation||nanodevice||screening||Coulomb interaction||III-V||TASE||MOSFETs||Integration||nanowire field-effect transistors||silicon nanomaterials||charge transport||one-dimensional multi-subband scattering models||Kubo–Greenwood formalism||schrödinger-poisson solvers||DC and AC characteristic fluctuations||gate-all-around||nanowire||work function fluctuation||aspect ratio of channel cross-section||timing fluctuation||noise margin fluctuation||power fluctuation||CMOS circuit||statistical device simulation||variability effects||Monte Carlo||Schrödinger based quantum corrections||quantum modeling||nonequilibrium Green’s function||nanowire transistor||electron–phonon interaction||phonon–phonon interaction||self-consistent Born approximation||lowest order approximation||Padé approximants||Richardson extrapolation||ZnO||field effect transistor||conduction mechanism||metal gate||material properties||fabrication||modelling||nanojunction||constriction||quantum electron transport||quantum confinement||dimensionality reduction||stochastic Schrödinger equations||geometric correlations||silicon nanowires||nano-transistors||quantum transport||hot electrons||self-cooling||nano-cooling||thermoelectricity||heat equation||non-equilibrium Green functions||power dissipation