Nanostructured Light-Emitters


English[eng]


Liquid phase deposition method||InGaN/GaN light-emitting diode||silver nanoparticle||zinc oxide||localized surface plasmon||β-Ga2O3||III-Nitrides||monoclinic||hexagonal arrangement||high-power||current distribution||vertical structure LED||blue organic light emitting diodes||transport materials||host-dopant||nanoparticles||luminescence||non-stoichiometric ZnxAgyInS1.5+x+0.5y nanocrystals||photoluminescence properties||tunable fluorescence emission||one-pot approach||perovskite light-emitting diodes||three-step spin coating||hole transport layer||PEDOT:PSS/MoO3-ammonia composite||μLED displays||μLEDs||GaN nanowires||core-shell structure||ultraviolet (UV) emitter||surface plasmon||Pt nanoparticles||hole-pattern||photon emission efficiency||distributed Bragg reflectors||gratings||GaN-based lasers||linewidth||epsilon-near-zero||wideband absorber||plasmon mode||Brewster mode||visible light communication||photonic crystals||flip-chip LED||Purcell effect||light extraction efficiency||nanostructured materials||surface/interface properties||nanostructured light-emitting devices||physical mechanism||surface/interface modification||surface/interface control||micro-scale light emitting diode||sapphire substrate||encapsulation||compound semiconductor||nanostructure||ultraviolet||light-emitting diode (LED)||molecular beam epitaxy||GaN||AlN||photonic nanojet||photonic nanojet array||self-assembly||template-assisted self-assembly||patterning efficiency||III-nitride thin film||nanostructures||ultraviolet emitters||surface passivation||luminescence intensity||n/a