Micro- and Nanotechnology of Wide Bandgap Semiconductors 

<br/><br/><br/>English[eng] 
<br/><br/><label>ISBN: </label>9783040000000 
<br/><br/><label>Subjects--Topical Terms: </label><br/>GaN HEMT||self-heating effect||microwave power amplifier||thermal impedance||thermal time constant||thermal equivalent circuit||GaN||crystal growth||ammonothermal method||HVPE||ion implantation||gallium nitride||thermodynamics||ultra-high-pressure annealing||diffusion||diffusion coefficients||molecular beam epitaxy||nitrides||laser diode||tunnel junction||LTE||AlN||AlGaN/GaN||interface state density||conductance-frequency||MISHEMT||gallium nitride nanowires||polarity||Kelvin probe force microscopy||selective area growth||selective epitaxy||AlGaN/GaN heterostructures||edge effects||effective diffusion length||MOVPE||nanowires||AlGaN||LEDs||growth polarity||n/a