Seo, Jung-Hun <br/><br/>
Wide Bandgap Semiconductor Based Micro/Nano Devices 

<br/><br/><br/>English[eng] 
<br/><br/><label>Subjects--Topical Terms: </label><br/>ohmic contact||n/a||MESFET||optical band gap||wide-bandgap semiconductor||annealing temperature||junction termination extension (JTE)||channel length modulation||silicon carbide (SiC)||amorphous InGaZnO (a-IGZO)||light output power||GaN||electrochromism||large signal performance||passivation layer||4H-SiC||positive gate bias stress (PGBS)||asymmetric power combining||ultrahigh upper gate height||high electron mobility transistors||space application||gallium nitride (GaN)||phase balance||edge termination||distributed Bragg reflector||cathode field plate (CFP)||ammonothermal GaN||anode field plate (AFP)||W band||GaN high electron mobility transistor (HEMT)||1T DRAM||growth of GaN||tungsten trioxide film||thin-film transistor (TFT)||micron-sized patterned sapphire substrate||power added efficiency||T-anode||analytical model||AlGaN/GaN||harsh environment||high-temperature operation||amplitude balance||buffer layer||characteristic length||Ku-band||DIBL effect||I–V kink effect||flip-chip light-emitting diodes||high electron mobility transistors (HEMTs)||power amplifier||sidewall GaN||external quantum efficiency||breakdown voltage (BV)||threshold voltage (Vth) stability||regrown contact||AlGaN/GaN HEMT||TCAD||high electron mobility transistor (HEMT)