000			01066nam a2200133Ia 4500
008			220615s9999||||xx |||||||||||||| ||und||
020			_a9783040000000
245		0	_aSemiconductor Infrared Devices and Applications
546			_aEnglish[eng]
650			_amicrobolometer||infrared sensor||complementary metal-oxide semiconductor (CMOS)||high sensitivity||temperature sensor||microresonator||MEMS||clamped–clamped beam||thermal detector||Infrared detector||strained layer superlattice||InAs/InAsSb||absorption coefficient||barrier detector||high operating temperature||manganite||heterostructure||photodetector||heterostructures||split-off band||wavelength extension||device performance||ultrasound transducer||photoacoustic imaging||piezoelectric||micromachined||CMUT||PMUT||optical ultrasound detection||type-II superlattice||infrared detector||mid-wavelength infrared (MWIR)||unipolar barrier||InAs/GaSb||T2SL||IR||TE-cooled||spectroscopy||RoHS||MCT||n/a
700			_aPerera, A. G. Unil
856			_uhttps://mdpi.com/books/pdfview/book/5129
942			_cEB
999			_c11008 _d11008