000			01779nam a2200133Ia 4500
008			220615s9999||||xx |||||||||||||| ||und||
020			_a9783040000000
245		0	_aFeature Papers in Electronic Materials Section
546			_aEnglish[eng]
650			_avertical GaN||quasi-vertical GaN||reliability||trapping||degradation||MOS||trench MOS||threshold voltage||nanomanufacturing||high-throughput method||material printing||flexible bioelectronics||nanomembrane||hybrid integration||GaAs||InGaAs channel||epitaxial lift-off||HEMT||van der Waals||3C-SiC||stacking faults||doping||KOH etching||silicon carbide||radiation hardness||proton and electron irradiation||charge removal rate||compensation||irradiation temperature||heteroepitaxy||bulk growth||compliant substrates||defects||stress||cubic silicon carbide||power electronics||thin film||iron-based superconductor||pulsed laser deposition||transmission electron microscopy||diamond||MPCVD growth||electron microscopy||chemical vapour deposition||2D materials||MoS2||silica point defects||optical fibers||radiation effects||4H-SiC||ohmic contact||SIMS||Ti3SiC2||simulation||Schottky barrier||Schottky diodes||electrical characterization||graphene absorption||Fabry–Perot filter||radio frequency sputtering||CVD graphene||GaN||thermal management||GaN-on-diamond||CVD||arrhythmia detection||cardiovascular monitoring||soft biosensors||wearable sensors||flexible electronics||gate dielectric||aluminum oxide||interface||traps||instability||insulators||binary oxides||high-κ dielectrics||wide band gap semiconductors||energy electronics||ultra-wide bandgap||diodes||transistors||gallium oxide||Ga2O3||spinel||ZnGa2O4
700			_aRoccaforte, Fabrizio
856			_uhttps://mdpi.com/books/pdfview/book/4977
942			_cEB
999			_c17848 _d17848