000			01323nam a2200133Ia 4500
008			220616s9999||||xx |||||||||||||| ||und||
020			_a9783040000000
245		0	_aMetal Oxide Thin Films: Synthesis, Characterization and Applications
546			_aEnglish[eng]
650			_aplasma electrolytic oxidation||electrical characteristic||anodizing||SEM||aluminum||low-temperature fabrication||ions adsorption||IGZO TFTs||device performance||oxidation||wide-bandgap semiconductor||α-Ga2O3||mist chemical vapor deposition (mist-CVD)||carrier gas||transparent semiconductor||cellulose||tribological performance||stability||MAO (micro-arc oxidation) coating||self-lubricating||gadolinium cobaltites||atomic layer deposition||β-diketonates||ozone||preferential crystal growth orientation||high-aspect-ratio substrate||metal oxide thin films||ALD||crystallography||epitaxy||NiTiO3||tin oxide||thin films||atmospheric pressure chemical vapour deposition transport properties||magnetoresistance||impedance spectroscopy||charge carrier mobility||dynamic hot-probe measurements||indium-tin oxide||aluminum-zinc oxide||magnetron co-sputtering||bismuth ferrite||La-doping||piezoelectricity||sol–gel||n/a
700			_aRauwel, habil. Erwan||Rauwel, Protima
856			_uhttps://mdpi.com/books/pdfview/book/5399
942			_cEB
999			_c19357 _d19357