| 000 | 01199nam a2200121Ia 4500 | ||
|---|---|---|---|
| 008 | 220616s9999||||xx |||||||||||||| ||und|| | ||
| 100 | _aWang, Xiaotian||Chen, Hong||Khenata, Rabah | ||
| 245 | 0 | _aRecent Advances in Novel Materials for Future Spintronics | |
| 546 | _aEnglish[eng] | ||
| 650 | _an/a||doping||spin polarization||first-principle||quaternary Heusler alloy||electronic structure||Prussian blue analogue||first-principles calculations||first-principles calculation||magnetic anisotropy||pressure||Nb (100) surface||Dzyaloshinskii–Moriya interaction||optical properties||skyrmion||equiatomic quaternary Heusler compounds||Heusler alloy||interface structure||first principles||magnetism||spin transport||first-principles method||monolayer CrSi2||half-metallic material||H adsorption||half-metallic materials||lattice dynamics||spin gapless semiconductor||first-principle calculations||half-metallicity||bulk CrSi2||covalent hybridization||H diffusion||electronic property||MgBi2O6||physical nature||Mo doping||phase stability||mechanical anisotropy||quaternary Heusler compound||magnetic properties||exchange energy | ||
| 856 | _uhttps://mdpi.com/books/pdfview/book/1320 | ||
| 942 | _cEB | ||
| 999 |
_c21101 _d21101 |
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