000			01115nam a2200121Ia 4500
008			220620s9999||||xx |||||||||||||| ||und||
245		0	_aHigh-Efficiency Crystalline Silicon Solar Cells
546			_aEnglish[eng]
650			_afill factor loss analysis||double-diode model||PERC||temperature dependence||recombination current density||parasitic resistance||carrier selective contact||rear emitter heterojunction||passivation||crystallinity||thermal annealing||excimer laser annealing||amorphous hydrogenated silicon film||metallization||contact formation||Ag/Al paste||p+ emitter||N-type bifacial solar cells||silicon tandem heterojunction solar cell||N-doped Cu2O absorber layer||Al:ZnO (AZO)||numerical electro-optical modeling||scanning electron microscopy (SEM)||atomic force microscopy (AFM)||X-ray diffraction (XRD)||spectroscopic ellipsometry (SE)||Fourier-transform infrared (FTIR) spectroscopy||degradation degree||failure rate||selective emitter||surface morphology||doping process||solar cell
700			_aCho, Eun-Chel||Lee, Hae-Seok
856			_uhttps://mdpi.com/books/pdfview/book/3264
942			_cEB
999			_c35265 _d35265