000			01077nam a2200133Ia 4500
008			220615s9999||||xx |||||||||||||| ||und||
020			_a9783040000000
245		0	_aMicro- and Nanotechnology of Wide Bandgap Semiconductors
546			_aEnglish[eng]
650			_aGaN HEMT||self-heating effect||microwave power amplifier||thermal impedance||thermal time constant||thermal equivalent circuit||GaN||crystal growth||ammonothermal method||HVPE||ion implantation||gallium nitride||thermodynamics||ultra-high-pressure annealing||diffusion||diffusion coefficients||molecular beam epitaxy||nitrides||laser diode||tunnel junction||LTE||AlN||AlGaN/GaN||interface state density||conductance-frequency||MISHEMT||gallium nitride nanowires||polarity||Kelvin probe force microscopy||selective area growth||selective epitaxy||AlGaN/GaN heterostructures||edge effects||effective diffusion length||MOVPE||nanowires||AlGaN||LEDs||growth polarity||n/a
700			_aPiotrowska, Anna B.||Kamińska, Eliana||Wojtasiak, Wojciech
856			_uhttps://mdpi.com/books/pdfview/book/4724
942			_cEB
999			_c7535 _d7535