000			01595nam a2200121Ia 4500
008			220615s9999||||xx |||||||||||||| ||und||
100			_aSeo, Jung-Hun
245		0	_aWide Bandgap Semiconductor Based Micro/Nano Devices
546			_aEnglish[eng]
650			_aohmic contact||n/a||MESFET||optical band gap||wide-bandgap semiconductor||annealing temperature||junction termination extension (JTE)||channel length modulation||silicon carbide (SiC)||amorphous InGaZnO (a-IGZO)||light output power||GaN||electrochromism||large signal performance||passivation layer||4H-SiC||positive gate bias stress (PGBS)||asymmetric power combining||ultrahigh upper gate height||high electron mobility transistors||space application||gallium nitride (GaN)||phase balance||edge termination||distributed Bragg reflector||cathode field plate (CFP)||ammonothermal GaN||anode field plate (AFP)||W band||GaN high electron mobility transistor (HEMT)||1T DRAM||growth of GaN||tungsten trioxide film||thin-film transistor (TFT)||micron-sized patterned sapphire substrate||power added efficiency||T-anode||analytical model||AlGaN/GaN||harsh environment||high-temperature operation||amplitude balance||buffer layer||characteristic length||Ku-band||DIBL effect||I–V kink effect||flip-chip light-emitting diodes||high electron mobility transistors (HEMTs)||power amplifier||sidewall GaN||external quantum efficiency||breakdown voltage (BV)||threshold voltage (Vth) stability||regrown contact||AlGaN/GaN HEMT||TCAD||high electron mobility transistor (HEMT)
856			_uhttps://mdpi.com/books/pdfview/book/1265
942			_cEB
999			_c9669 _d9669