000			02373nam a2200121Ia 4500
008			220615s9999||||xx |||||||||||||| ||und||
100			_aLi, Qiliang||Zhu, Hao
245		0	_aNanoelectronic Materials, Devices and Modeling
546			_aEnglish[eng]
650			_aquantum mechanical||n/a||neuromorphic computation||off-current (Ioff)||double-gate tunnel field-effect-transistor||topological insulator||back current blocking layer (BCBL)||CMOS power amplifier IC||information integration||distributed Bragg||spike-timing-dependent plasticity||electron affinity||enhancement-mode||current collapse||gallium nitride (GaN)||band-to-band tunneling||vertical field-effect transistor (VFET)||ionic liquid||luminescent centres||thermal coupling||vision localization||PC1D||UAV||ZnO/Si||dual-switching transistor||memristor||field-effect transistor||higher order synchronization||shallow trench isolation (STI)||memristive device||on-current (Ion)||low voltage||reflection transmision method||dielectric layer||source/drain (S/D)||high efficiency||nanostructure synthesis||InAlN/GaN heterostructure||supercapacitor||high-electron mobility transistor (HEMTs)||heterojunction||p-GaN||recessed channel array transistor (RCAT)||gate field effect||charge injection||saddle FinFET (S-FinFET)||L-shaped tunnel field-effect-transistor||conductivity||energy storage||hierarchical||PECVD||sample grating||MISHEMT||bistability||threshold voltage (VTH)||bandgap tuning||oscillatory neural networks||UV irradiation||Mott transition||third harmonic tuning||topological magnetoelectric effect||cross-gain modulation||2D material||solar cells||silicon on insulator (SOI)||Green’s function||optoelectronic devices||semiconductor optical amplifier||ZnO films||graphene||AlGaN/GaN||polarization effect||two-photon process||conductive atomic force microscopy (cAFM)||2DEG density||vanadium dioxide||interface traps||potential drop width (PDW)||pattern recognition||drain-induced barrier lowering (DIBL)||atomic layer deposition (ALD)||normally off power devices||gate-induced drain leakage (GIDL)||insulator–metal transition (IMT)||zinc oxide||synaptic device||subthreshold slope (SS)||landing||silicon||corner-effect||conditioned reflex||quantum dot||gallium nitride||bismuth ions||conduction band offset||variational form
856			_uhttps://mdpi.com/books/pdfview/book/1423
942			_cEB
999			_c9812 _d9812